In order to accommodate increasing demand for semiconductors produced using advanced processes along with optimized solutions and high-performance products based on leading-edge technologies, Tokyo-based electronics giant Fujitsu Ltd. reported today that it will construct a new 65nm fab to mass-produce logic semiconductors on 300mm wafers.

The fab will be constructed at Fujitsu’s Mie semiconductor plant, in Mie prefecture of central Japan, as the second 300mm fab of the pl ant and will be referred to as 300mm Fab No. 2, the company noted.
300mm Fab No. 2 will contain a dual-level clean room structure and is scheduled to be constructed between this April through March 2007, to become operational beginning in April 2007, with volume shipments expected to start in July 2007.

Fujitsu said it expects to invest approximately $1.05 billion (120 billion yen) in the new fab that will eventually reach production capacity of 10,000 wafers per month. Further investments will be made in stages as the company evaluates trends in market demand, with maximum capacity to reach 25,000 wafers per month.

The company’s first 300mm fab that was constructed at the Mie plant with a line for mass production of 300mm wafers employing 90nm technology, has been operational since April 2005 and will reach a production capacity of 15,000 wafers per month in fiscal 2006, Fujitsu said.
Fujitsu is continuously in negotiations with various global technology partners, and expects that from fiscal 2007, demand will significantly exceed the production capacity of its currently operating 300mm Fab No. 1.

By constructing the 300mm Fab No. 2 with a dual-level clean room structure capable of easy expansion of capacity, Fujitsu believes it will ensure a stable supply of leading-edge logic chips to its customers.
Fab No. 2 will use seismic-vibration control construction with 24,000 square meters of clean room area at maximum capacity, Fujitsu concluded.